1 edition 1.3 august 2004 FLM1011-4F x, ku-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 25.0 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 16.0 and -2.2 ma respectively with gate resistance of 100 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 1700 2600 -0.5 -1.5 -3.0 35.5 36.0 - 6.0 7.0 - v ds = 5v, i ds = 85ma v ds = 5v, i ds = 1100ma v ds = 5v, v gs = 0v i gs = -85 a v ds = 10v f = 10.7 ~ 11.7 ghz i ds = 0.65 i dss (typ.) z s = z l = 50 ? ma v - 1700 - ms -5.0 - - v db dbm g m v p v gso p 1db g 1db drain current - 1100 1300 ma i dsr power-added efficiency -29- % add gain flatness -- 0.6 db ? g thermal resistance channel to case - 5.0 6.0 c/w case style: ia r th 3rd order intermodulation distortion f = 11.7ghz, ? f = 10mhz 2-tone test pout = 25.5dbm s.c.l. -44 -46 - dbc im 3 test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) g.c.p.: gain compression point, s.c.l.: single carrier level 10v x i dsr x r th channel temperature rise - - 80 c ? t ch description the FLM1011-4F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. eudyna s stringent quality assurance program assures the highest reliability and consistent performance. features ?high output power: p 1db = 36.0dbm (typ.) ?high gain: g 1db = 7.0db (typ.) ?high pae: add = 29% (typ.) ?low im 3 = -46dbc@po = 25.5dbm ?broad band: 10.7 ~ 11.7ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed
2 FLM1011-4F x, ku-band internally matched fet power derating curve 50 0 100 150 200 case temperature ( c) 24 30 18 12 6 total power dissipation (w) output power & im 3 vs. input power 19 17 21 23 25 input power (s.c.l.) (dbm) s.c.l.: single carrier level 26 28 30 32 34 36 24 -50 -40 -20 -10 -30 output power (s.c.l.) (dbm) im 3 im 3 (dbc) v ds =10v f 1 = 11.7 ghz f 2 = 11.71 ghz 2-tone test 22 p out output power vs. frequency pin=30dbm 29dbm 28dbm 27dbm 10.7 10.95 11.2 11.45 11.7 frequency (ghz) 35 36 37 output power (dbm) v ds =10v p 1db output power vs. input power v ds =10v f = 11.2 ghz 20 22 24 26 28 30 input power (dbm) 30 32 34 36 28 26 30 45 15 output power (dbm) add p out add (%)
3 FLM1011-4F x, ku-band internally matched fet +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 21 | scale for |s 12 | 0.2 0.1 250 50 ? 10 1 2 34 11.7 11.7 11.9 11.9 11.3 11.3 10.5 ghz 10.5 ghz 10.7 10.7 10.9 10.9 11.1 11.1 11.5 11.5 11.7 11.7 11.9 11.9 11.3 11.3 10.5 ghz 10.5 ghz 10.7 10.7 10.9 10.9 11.1 11.1 11.5 11.5 s-parameters v ds = 10v, i ds = 1100ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 10500 .666 55.1 2.512 -107.2 .044 -99.7 .523 170.5 10600 .637 46.8 2.515 -116.8 .047 -111.7 .517 158.3 10700 .601 37.9 2.523 -126.9 .051 -123.6 .519 146.4 10800 .561 28.5 2.532 -137.1 .054 -136.9 .523 135.4 10900 .514 19.2 2.544 -147.1 .059 -149.1 .533 125.4 11000 .463 8.9 2.553 -157.3 .059 -161.3 .544 116.2 11100 .406 -2.4 2.562 -167.9 .063 -172.7 .548 108.1 11200 .345 -15.5 2.570 -178.3 .069 175.9 .553 100.4 11300 .281 -31.3 2.576 170.8 .071 164.8 .552 93.2 11400 .217 -51.9 2.576 159.8 .075 152.3 .544 85.7 11500 .167 -82.6 2.570 148.5 .082 140.7 .528 78.2 1600 .154 -126.2 2.562 137.1 .084 129.7 .506 70.2 11700 .195 -165.7 2.547 125.1 .087 117.1 .473 61.1 11800 .265 166.8 2.526 112.7 .090 104.3 .431 51.2 11900 .343 147.1 2.518 100.3 .090 91.7 .384 40.4
4 FLM1011-4F x, ku-band internally matched fet 2-r 1.25 0.15 (0.049) 0.5 (0.020) 8.1 (0.319) 13.0 0.15 (0.512) 16.5 0.15 (0.650) 3.2 max. (0.126) 1.8 0.15 (0.071) 0.1 (0.004) 9.7 0.15 (0.382) 1.5 min. (0.059) 1.5 min. (0.059) 1.15 (0.045) 0.2 max. (0.008) case style "ia" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 4. source (flange) 1 2 3 4 eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put this product into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. for further information please contact: eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 eudyna devices asia pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel: +81-45-853-8156 fax: +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice. the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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